High-level incorporation of antimony in germanium by laser annealing (Articolo in rivista)

Type
Label
  • High-level incorporation of antimony in germanium by laser annealing (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Bruno E, Scapellato GG, Bisognin G, Carria E, Romano L, Carnera A, Priolo F (2010)
    High-level incorporation of antimony in germanium by laser annealing
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bruno E, Scapellato GG, Bisognin G, Carria E, Romano L, Carnera A, Priolo F (literal)
Pagina inizio
  • 124902 (literal)
Pagina fine
  • 124902 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 108 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • MATIS-IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy MATIS-IMM-CNR and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy (literal)
Titolo
  • High-level incorporation of antimony in germanium by laser annealing (literal)
Abstract
  • In this work we investigate pulse laser annealing as an alternative approach to reach high-level incorporation of Sb in substitutional location in crystalline germanium. Laser irradiation is demonstrated to recover also those structural defects, like honeycomb structures, that form during high-fluence heavy-ion implantations in Ge and that cannot be eliminated by conventional thermal treatments. Indeed, concentrations of substitutional Sb higher than 1x1021 at. /cm3 have been obtained, well above the solid solubility of Sb in Ge. The strain induced on the Ge host lattice is also investigated, evidencing that the obtained Sb doped Ge layer is pseudomorphic to the Ge substrate while positively strained by the substitutional Sb atoms present within the Ge matrix. The kinetics of this Sb-rich Ge alloy phase is finally investigated, showing that most of Sb goes out of lattice with increasing the annealing temperature up to 488 °C, leading to a decrease in the related lattice deformation. These results are very relevant for the future high-mobility channel technology. (literal)
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