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Analysis and simulation of charge collection efficiency in silicon thin detectors (Articolo in rivista)
- Type
- Label
- Analysis and simulation of charge collection efficiency in silicon thin detectors (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.nima.2005.03.051 (literal)
- Alternative label
Petasecca, M.; Moscatelli, F.; Pignatel, G.U. (2005)
Analysis and simulation of charge collection efficiency in silicon thin detectors
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT; Elsevier B.V., Amsterdam (Belgio)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Petasecca, M.; Moscatelli, F.; Pignatel, G.U. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.sciencedirect.com/science/article/pii/S0168900205006480 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- DIEI, University of Perugia, via G. Duranti, 93, 06125 Perugia, Italy
INFN sez. Perugia, via Pascoli, 10, 06100 Perugia, Italy
IMM-CNR sez. Bologna, via Gobetti, 101, 04129 Bologna, Italy (literal)
- Titolo
- Analysis and simulation of charge collection efficiency in silicon thin detectors (literal)
- Abstract
- Thin detectors have been proposed to investigate the possibility to limit the full depletion voltage and the leakage
current ofheavily irradiated silicon devices. In this work we compare typical silicon detectors (p-n junctions over a
300 mm thick substrate) with thinned devices (50-100 mm ofthickness). In order to investigate the performances of these
structures, simulations have been carried out using the ISE-TCAD DESSIS device simulator. The so called three-level
model has been used to investigate the effects of the radiation fluence on charge collection efficiency of thin and thick
silicon structures. For each thickness, we simulate the hit ofa minimum ionizing particle and then we calculate the
current at the diode's electrode. We consider a 7?x10^11 cm?^3 n-doped substrate (a high resistivity substrate); all the
structures are composed ofa 40 mm diode contact and a 15 mm distant guard ring. The simulated collected charge ofthe
300 mm diode is in agreement with the experimental results; the simulation ofthinner structures (50-100 mm) shows a
saturation ofthe number of e-h pairs collected at the diode's electrodes. These results suggest that thin detectors may
have a better performance at higher fluences than thick ones. They are maximizing the collected charge at lower
depletion voltage. (literal)
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