Reliability of thin thermally grown SiO2 on 3C-SiC studied by scanning probe microscopy (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Reliability of thin thermally grown SiO2 on 3C-SiC studied by scanning probe microscopy (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Eriksson J, Weng MH, Roccaforte F, Giannazzo F, Fiorenza P, Lorenzzi J, Ferro G, Raineri V (2010)
  Reliability of thin thermally grown SiO2 on 3C-SiC studied by scanning probe microscopy
  in Materials science forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Eriksson J, Weng MH, Roccaforte F, Giannazzo F, Fiorenza P, Lorenzzi J, Ferro G, Raineri V (literal)

Pagina inizio

• 833 (literal)

Pagina fine

• 836 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 645 (literal)

Rivista

• Materials science forum (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR IMM, I-95121 Catania, Italy (literal)

Titolo

• Reliability of thin thermally grown SiO2 on 3C-SiC studied by scanning probe microscopy (literal)

Abstract

• This paper reports on the electrical characteristics of thermally grown SiO2 on cubic silicon carbide (3C-SiC). The 3C-SiC (1 1) was grown on Si-face 6H-SiC (0001) on-axis substrates by a non-conventional Vapor-Liquid-Solid (VLS) technique. Scanning probe microscopy techniques, including Atomic Force Microscopy (AFM), Scanning Capacitance Microscopy (SCM) and tunneling AFM (TUNA) were employed to study the morphology, local capacitance and local current variations across the sample surface. This nanoscale investigation allowed monitoring the homogeneity, as well as reliability in terms of dielectric breakdown (BD), of the thermally grown SiO2. In this way it was possible to gain insights into the breakdown related to pre-existing defects (extrinsic breakdown) as well as the actual intrinsic breakdown of the dielectric. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Autore CNR

• PATRICK FIORENZA (Persona)
• VITO RAINERI (Persona)
• GUSTAV JENS PETER ERIKSSON (Unità di personale esterno)
• MING HUNG WENG (Unità di personale esterno)
• FABRIZIO ROCCAFORTE (Persona)
• FILIPPO GIANNAZZO (Persona)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• PATRICK FIORENZA (Persona)
• MING HUNG WENG (Unità di personale esterno)
• GUSTAV JENS PETER ERIKSSON (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)