Microtwin reduction in 3C-SiC heteroepitaxy (Articolo in rivista)

Type
Label
  • Microtwin reduction in 3C-SiC heteroepitaxy (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Severino A, La Via F (2010)
    Microtwin reduction in 3C-SiC heteroepitaxy
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Severino A, La Via F (literal)
Pagina inizio
  • 181916 (literal)
Pagina fine
  • 181916 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 97 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR (literal)
Titolo
  • Microtwin reduction in 3C-SiC heteroepitaxy (literal)
Abstract
  • In this letter, we have studied the density of microtwins in the vicinity of the film surface, by using in-plane grazing incidence diffraction technique, to suggest a reduction trend of such defects at different growth rates. In (100) 3C-SiC heteroepitaxy, microtwin density decreases when a slower growth rate process is performed. A reduction ratio of microtwins of 0.16, 0.2, and 0.28 for 2 mu m/h, 5 mu m/h, and 10 mu m/h, respectively, has been obtained. The relationship between microtwin density and growth rate, or Si/H-2 ratio, found with this technique is in perfect agreement with the pre-existent literature. (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it