Pd/Au/SiC Nanostructured Diodes for Nanoelectronics: Room Temperature Electrical Properties (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Pd/Au/SiC Nanostructured Diodes for Nanoelectronics: Room Temperature Electrical Properties (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/TNANO.2009.2033270 (literal)

Alternative label

• Ruffino F, Crupi I, Irrera A, Grimaldi MG (2010)
  Pd/Au/SiC Nanostructured Diodes for Nanoelectronics: Room Temperature Electrical Properties
  in IEEE transactions on nanotechnology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ruffino F, Crupi I, Irrera A, Grimaldi MG (literal)

Pagina inizio

• 414 (literal)

Pagina fine

• 421 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 9 (literal)

Rivista

• IEEE transactions on nanotechnology (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy 2. IMM-MATIS CNR, I-95123 Catania, Italy (literal)

Titolo

• Pd/Au/SiC Nanostructured Diodes for Nanoelectronics: Room Temperature Electrical Properties (literal)

Abstract

• Pd/Au/SiC nanostructured Schottky diodes were fabricated embedding Au nanoparticles (NPs) at the metal-semiconductor interface of macroscopic Pd/SiC contacts. The Au NPs mean size was varied controlling the temperature and time of opportune annealing processes. The electrical characteristics of the nanostructured diodes were studied as a function of the NPs mean size. In particular, using the standard theory of thermoionic emission, we obtained the effective Schottky barrier height (SBH) and the effective ideality factor observing their dependence on the annealing time and temperature being the signature of their dependence on the mean NP size. Furthermore, plotting the effective SBH as a function of the effective ideality factor we observe a linear correlation, indicating that the Au NPs act as lateral inhomogeneities in the Schottky diodes according to the Tung's model. Therefore, we can control the size, fraction of covered area, and surface density of such intentionally introduced inhomogeneities. The application of the Tung's model for the electronic transport in inhomogeneous Schottky contacts allow us to obtain, in particular, the homogeneous SBH. These nanostructured diodes are proposed as possible components of integrated complex nanoelectronic devices. (literal)

Prodotto di

• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ISODIANA CRUPI (Unità di personale interno)
• ALESSIA IRRERA (Persona)
• MARIA GRAZIA GRIMALDI (Persona)
• FRANCESCO RUFFINO (Persona)

Incoming links:

Autore CNR di

• ISODIANA CRUPI (Unità di personale interno)
• ALESSIA IRRERA (Persona)
• MARIA GRAZIA GRIMALDI (Persona)
• FRANCESCO RUFFINO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• IEEE transactions on nanotechnology (Rivista)