Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8A degrees off-axis 4H-SiC (Articolo in rivista)

Type
Label
  • Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8A degrees off-axis 4H-SiC (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Roccaforte F, Weng MH, Bongiorno C, Giannazzo F, Iucolano F, Raineri V (2010)
    Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8A degrees off-axis 4H-SiC
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Roccaforte F, Weng MH, Bongiorno C, Giannazzo F, Iucolano F, Raineri V (literal)
Pagina inizio
  • 197 (literal)
Pagina fine
  • 202 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 100 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, I-95121 Catania, Italy (literal)
Titolo
  • Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8A degrees off-axis 4H-SiC (literal)
Abstract
  • This paper reports on the influence of material defects on the electrical behaviour of AlGaN/GaN heterostructures grown onto off-axis 4H-SiC. A structural characterization revealed the presence of near-surface V-shaped defects, mostly oriented along the miscut direction [11-20]. High electron mobility transistors with the channel oriented along this direction showed a preferential conduction, while a significant reduction of the drain current occurred only along the orthogonal direction. An electrical analysis allowed us to demonstrate the anisotropy of the mobility of the two-dimensional electron gas. (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
data.CNR.it