Optical investigation of bulk electron mobility in 3C-SiC films on Si substrates (Articolo in rivista)

Type
Label
  • Optical investigation of bulk electron mobility in 3C-SiC films on Si substrates (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Piluso N, Severino A, Camarda M, Canino A, La Magna A, La Via F (2010)
    Optical investigation of bulk electron mobility in 3C-SiC films on Si substrates
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Piluso N, Severino A, Camarda M, Canino A, La Magna A, La Via F (literal)
Pagina inizio
  • 142103 (literal)
Pagina fine
  • 142103 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 97 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR (literal)
Titolo
  • Optical investigation of bulk electron mobility in 3C-SiC films on Si substrates (literal)
Abstract
  • The dependence between the carrier concentration and electrical mobility has been studied by micro-Raman spectroscopy in n-doped 3C-SiC films grown on (111) and (100) Silicon oriented substrates. Bulk mobility varies between 10 and 510 cm(2) V-1 s(-1) for a carrier concentration ranging between 1.6 X 10(16) and 5.4 X 10(18) cm(-3). Local stacking variations observed on the (111) 3C-SiC surface lead to a worse crystal morphology compared to (100) 3C-SiC films resulting in a decrease in the average bulk mobility. Defects are thus accountable for the dependence between mobility and carrier concentration for different 3C-SiC orientations. (literal)
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