Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3407542 (literal)

Alternative label

• Persano A, Quaranta F, Martucci MC, Creti P, Siciliano P, Cola A (2010)
  Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Persano A, Quaranta F, Martucci MC, Creti P, Siciliano P, Cola A (literal)

Pagina inizio

• 114502 (literal)

Pagina fine

• 114502 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 107 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 10 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM-CNR (literal)

Titolo

• Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application (literal)

Abstract

• The potential of sputtered Ta2O5 thin films to be used as dielectric layers in capacitive radio frequency microelectromechanical system switches is evaluated by investigating two factors of crucial importance for the performance of these devices which are the transport mechanisms and the charging effects in the dielectric layer. We find that Ta2O5 films show good electrical and dielectrical properties for the considered application in terms of a low leakage current density of 4 nA/cm(2) for E=1 MV/cm, a high breakdown field of 4 MV/cm and a high dielectric constant of 32. For electric fields lower than 1 MV/cm the conduction mechanism is found to be variable-range hopping in the temperature range 300-400 K, while nearest-neighbor hopping is observed at higher temperatures. For fields in the range 1-4 MV/cm Poole-Frenkel becomes the dominant conduction mechanism. Current and capacitance transients used to investigate the charging effects show a decay which is well described by the stretched-exponential law, thus providing further insights on capture and emission processes. (literal)

Prodotto di

• Sensori e Microsistemi Intelligenti per la Sicurezza e la Qualità della vita nei settori Agroalimentare, Trasporti ed \"Ambient Assisted Living\" (MD.P05.010.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ADRIANO COLA (Unità di personale interno)
• FABIO QUARANTA (Unità di personale interno)
• PASQUALE CRETI' (Persona)
• ANNA PERSANO (Unità di personale interno)
• MARIA CONCETTA MARTUCCI (Persona)
• PIETRO ALEARDO SICILIANO (Unità di personale interno)

Incoming links:

Autore CNR di

• MARIA CONCETTA MARTUCCI (Persona)
• ADRIANO COLA (Unità di personale interno)
• PIETRO ALEARDO SICILIANO (Unità di personale interno)
• PASQUALE CRETI' (Persona)
• FABIO QUARANTA (Unità di personale interno)
• ANNA PERSANO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sensori e Microsistemi Intelligenti per la Sicurezza e la Qualità della vita nei settori Agroalimentare, Trasporti ed \"Ambient Assisted Living\" (MD.P05.010.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)