Light absorption and electrical transport in Si:O alloys for photovoltaics (Articolo in rivista)

Type
Label
  • Light absorption and electrical transport in Si:O alloys for photovoltaics (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3503852 (literal)
Alternative label
  • Mirabella S, Di Martino G, Crupi I, Gibilisco S, Miritello M, Lo Savio R, Di Stefano MA, Di Marco S, Simone F, Priolo F (2010)
    Light absorption and electrical transport in Si:O alloys for photovoltaics
    in Journal of applied physics; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mirabella S, Di Martino G, Crupi I, Gibilisco S, Miritello M, Lo Savio R, Di Stefano MA, Di Marco S, Simone F, Priolo F (literal)
Pagina inizio
  • 093507 (literal)
Pagina fine
  • 093507 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 108 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. MATIS IMM CNR, I-95123 Catania, Italy 2. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy 3. Scuola Super Catania, I-95123 Catania, Italy 4. STMicroelectronics, IMS R&D, I-95121 Catania, Italy (literal)
Titolo
  • Light absorption and electrical transport in Si:O alloys for photovoltaics (literal)
Abstract
  • Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the SiO alloy deposition, followed by annealing up to 1250 degrees C. Boron implantation (30 keV, 3-30 x 10(14) B/cm(2)) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 degrees C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell. (literal)
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