Radiation Tolerance of NROM Embedded Products (Articolo in rivista)

Type
Label
  • Radiation Tolerance of NROM Embedded Products (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/TNS.2010.2052286 (literal)
Alternative label
  • Lisiansky M, Cassuto G, Roizin Y, Corso D, Libertino S, Marino A, Lombardo SA, Crupi I, Pace C, Crupi F, Fuks D, Kiv A, Della Sala E, Capuano G, Palumbo F (2010)
    Radiation Tolerance of NROM Embedded Products
    in IEEE transactions on nuclear science
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lisiansky M, Cassuto G, Roizin Y, Corso D, Libertino S, Marino A, Lombardo SA, Crupi I, Pace C, Crupi F, Fuks D, Kiv A, Della Sala E, Capuano G, Palumbo F (literal)
Pagina inizio
  • 2309 (literal)
Pagina fine
  • 2317 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 57 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 9 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Tower Semicond Ltd, IL-23105 Migdal Haemeq, Israel 2. CNR, IMM, I-95121 Catania, Italy 3. CNR, MATIS, I-95121 Catania, Italy 4. Univ Calabria, I-87036 Calabria, Italy 5. Ben Gurion Univ Negev, IL-84105 Beer Sheva, Israel 6. Techno Syst Dev, I-80078 Naples, Italy 7. CNEA, RA-1605 Buenos Aires, DF Argentina (literal)
Titolo
  • Radiation Tolerance of NROM Embedded Products (literal)
Abstract
  • Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with gamma-rays (Co-60 source) and 10 MeV B-11 ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for both moderate (<1 Mrad) and large (>1 Mrad) TID. The obtained data is currently employed in the design of the new generation of NROM memories, having improved radiation tolerance (literal)
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