Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3459959 (literal)

Alternative label

• Mannino G, Spinella C, Ruggeri R, La Magna A, Fisicaro G, Fazio E, Neri F, Privitera V (2010)
  Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation
  in Applied physics letters; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Mannino G, Spinella C, Ruggeri R, La Magna A, Fisicaro G, Fazio E, Neri F, Privitera V (literal)

Pagina inizio

• 022107 (literal)

Pagina fine

• 022107 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://apl.aip.org/resource/1/applab/v97/i2/p022107_s1?isAuthorized=no (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 97 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 2 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR, IMM, I-95121 Catania, Italy 2. Univ Messina, Dipartimento Fis Mat & Ingn Elettron, I-98166 Messina, Italy (literal)

Titolo

• Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation (literal)

Abstract

• We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is similar to 80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (10(6) degrees C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat alpha-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing. (literal)

Editore

• AIP, American institute of physics (Editore)

Prodotto di

• Materiali e processi avanzati per celle fotovoltaiche (MD.P05.005.004) (Modulo)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• Rosa Ruggeri (Persona)
• VITTORIO PRIVITERA (Persona)
• ANTONINO LA MAGNA (Persona)
• ROSARIO CORRADO SPINELLA (Persona)
• GIOVANNI MANNINO (Persona)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• GIOVANNI MANNINO (Persona)
• ROSARIO CORRADO SPINELLA (Persona)
• Rosa Ruggeri (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e processi avanzati per celle fotovoltaiche (MD.P05.005.004) (Modulo)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Editore di

• AIP, American institute of physics (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)