Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Gerardi C, Tripiciano E, Cina G, Lombardo S, Garozzo C, Corso D, Betro G, Pace C, Crupi F (2010)
  Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances
  in Solid-state electronics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Gerardi C, Tripiciano E, Cina G, Lombardo S, Garozzo C, Corso D, Betro G, Pace C, Crupi F (literal)

Pagina inizio

• 1319 (literal)

Pagina fine

• 1325 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 54 (literal)

Rivista

• Solid-state electronics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Numonyx, Technol Transfer, I-95121 Catania, Italy 2. CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy 3. Univ Calabria, Dipartimento Elettron Informat & Sistemist, I-87036 Arcavacata Di Rende, CS Italy (literal)

Titolo

• Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances (literal)

Abstract

• Multiple gate tridimensional memory cells can have several additional advantages besides increased read current and excellent Ion/Ioff ratio, which are inherent in the multiple-gate transistor architecture. We show that tridimensional memory cells with rounded top geometry and SONOS storage stack strongly improve the Fowler-Nordheim tunneling program-erase performances because of an enhanced electric field effect and an increase of the cell coupling factor. Moreover, a remarkable enhancement of the tridimensional cell performances is expected if the blocking silicon oxide and the poly-silicon gate in the SONOS memory stack are replaced with a high-k dielectric and a high work-function metallic control gate. (literal)

Prodotto di

• Nuovi Dispositivi di Silicio Oltre il CMOS Scaling (MD.P05.023.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• DOMENICO CORSO (Persona)
• SALVATORE LOMBARDO (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi Dispositivi di Silicio Oltre il CMOS Scaling (MD.P05.023.001) (Modulo)

Autore CNR di

• SALVATORE LOMBARDO (Persona)
• http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID22728
• DOMENICO CORSO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Solid-state electronics (Rivista)