Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.82.161413 (literal)

Alternative label

• Deretzis I, Fiori G, Iannaccone G, La Magna A (2010)
  Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Deretzis I, Fiori G, Iannaccone G, La Magna A (literal)

Pagina inizio

• 161413-1 (literal)

Pagina fine

• 161413-4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://prb.aps.org/abstract/PRB/v82/i16/e161413 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 82 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Univ Catania, Scuola Super, I-95123 Catania, Italy 2. CNR IMM, I-95121 Catania, Italy 3. Univ Pisa, Dipartimento Ingn Informaz, I-56122 Pisa, Italy (literal)

Titolo

• Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions (literal)

Abstract

• We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schrodinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electrostatics along the ribbon length. Band-bending and doping effects strongly influence the transport properties, giving rise to conductance asymmetries and a selective suppression of the subband formation. Junction electrostatics and p-type characteristics drive the conduction mechanism in the case of high-work-function Au, Pd, and Pt electrodes while contact resistance becomes dominant in the case of Al. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Autore CNR

• ANTONINO LA MAGNA (Persona)
• IOANNIS DERETZIS (Persona)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• IOANNIS DERETZIS (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)