Nickel-affected silicon crystallization and silicidation on polyimide by multipulse excimer laser annealing (Articolo in rivista)

Type
Label
  • Nickel-affected silicon crystallization and silicidation on polyimide by multipulse excimer laser annealing (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3531562 (literal)
Alternative label
  • Alberti A.; La Magna A.; Cuscunà M.; Fortunato G.; Spinella C.; Privitera V. (2010)
    Nickel-affected silicon crystallization and silicidation on polyimide by multipulse excimer laser annealing
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Alberti A.; La Magna A.; Cuscunà M.; Fortunato G.; Spinella C.; Privitera V. (literal)
Pagina inizio
  • 123511 (literal)
Pagina fine
  • 123511 (literal)
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  • http://jap.aip.org/resource/1/japiau/v108/i12/p123511_s1?view=print (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 108 (literal)
Rivista
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  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR (literal)
Titolo
  • Nickel-affected silicon crystallization and silicidation on polyimide by multipulse excimer laser annealing (literal)
Abstract
  • Nickel enhanced amorphous Si crystallization and silicidation on polyimide were studied during multipulse excimer laser annealing (ELA) from submelting to melting conditions. A similar to 8 nm thick Ni film was deposited on a 100 nm thick alpha-Si layer at similar to 70 degrees C in order to promote partial nickel diffusion into silicon. In the submelting regime, Ni atoms distributed during deposition in alpha-Si and the thermal gradient due to the presence of the plastic substrate were crucial to induce low fluence (>= 0.08 J/cm(2)) Si crystallization to a depth which is strictly related to the starting Ni profile. Amorphous-Si crystallization is not expected on pure Si at those low fluences. Additional pulses at higher fluences do not modify the double poly-Si/alpha-Si structure until melting conditions are reached. At a threshold of similar to 0.2 J/cm(2), melting was induced simultaneously in the polycrystalline layer as well as in the residual alpha-Si due to a thermal gradient of similar to 200 degrees C. Further increasing the laser fluence causes the poly-Si layer to be progressively melted to a depth which is proportional to the energy density used. As a consequence of the complete Si melting, columnar poly-Si grains are formed above 0.3 J/cm(2). For all fluences, a continuous NiSi2 layer is formed at the surface which fills the large Si grain boundaries, with the beneficial effect of flattening the poly-Si surface. The results would open the perspective of integrating Ni-silicide layers as metallic contacts on Si during alpha-Si-crystallization by ELA on plastic substrate. (literal)
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