Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires (Articolo in rivista)

Type
Label
  • Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0268-1242/25/9/095011 (literal)
Alternative label
  • Cerofolini GF; Ferri M; Romano E; Suriano F; Veronese GP; Solmi S; Narducci D (2010)
    Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires
    in Semiconductor science and technology (Print); IOP Publishing Ltd., Bristol BS1 6BE (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cerofolini GF; Ferri M; Romano E; Suriano F; Veronese GP; Solmi S; Narducci D (literal)
Pagina inizio
  • 095011 (literal)
Pagina fine
  • 095017 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 25 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNISM and Department of Materials Science, University of Milano-Bicocca, via Cozzi 53, Milano, Italy 2. CNR - IMM, via Gobetti 101, Bologna, Italy (literal)
Titolo
  • Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires (literal)
Abstract
  • The race of integrated-circuit technology towards high bit density has already brought transistor densities of the order of 109 cm-2, while keeping conventional circuit layouts. Crossbar structures are widely believed to meet the requirements of high bit density along with sustainable interconnection complexity avoiding the dramatic cost increase of the manufacturing facilities (literal)
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