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Evidence of photoinduced charge transfer in C-60/GaAs(100) bilayers by pump-probe measurements (Articolo in rivista)

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Evidence of photoinduced charge transfer in C-60/GaAs(100) bilayers by pump-probe measurements (Articolo in rivista) (literal)

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Sessi, P; Brambilla, A; Finazzi, M; Duo, L; Cabanillas-Gonzalez, J; Egelhaaf, HJ; Lanzani, G; Ciccacci, F (2008)
Evidence of photoinduced charge transfer in C-60/GaAs(100) bilayers by pump-probe measurements
in Chemical physics letters (Print)
(literal)

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Sessi, P; Brambilla, A; Finazzi, M; Duo, L; Cabanillas-Gonzalez, J; Egelhaaf, HJ; Lanzani, G; Ciccacci, F (literal)

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\"[Sessi, P.; Brambilla, A.; Finazzi, M.; Duo, L.; Ciccacci, F.] CNISM, I-20133 Milan, Italy; [Cabanillas-Gonzalez, J.; Egelhaaf, H. J.; Lanzani, G.] Politecn Milan, ULTRAS INFM, IFN CNR, Dipartimento Fis, I-20133 Milan, Italy (literal)

Titolo

Evidence of photoinduced charge transfer in C-60/GaAs(100) bilayers by pump-probe measurements (literal)

Abstract

Hybrid interfaces in semiconductor heterostructures consisting of C-60/GaAs bilayers have been investigated by means of ultrafast pump-probe spectroscopy. From previous results, the energy levels alignment at the interface shows no injection barrier for electrons from GaAs to C-60. Measurements have been carried out in order to monitor photoinduced electron transfer across the interface. Upon selective excitation of the GaAs layer we observe photobleaching (PB) of C-60 due to a decrease of C-60 neutral molecules. We monitor the PB dynamics concluding that electron transfer proceeds in about 4 ps and then relaxes back to ground state in timescales beyond 100 ps. (C) 2008 Elsevier B.V. All rights reserved. (literal)

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