Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3457906 (literal)

Alternative label

• Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG (2010)
  Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG (literal)

Pagina inizio

• 024503 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 108 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 9 (literal)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM,via Gobetti 101, 40129 Bologna, Italy National Institute of Materials Physics, Box MG-7, Bucharest-Magurele 077125, Romania Department of Physics, Center for Materials Science and Nanotechnology, Oslo University, P.B. 1048 Blindern N-0316 Oslo, Norway (literal)

Titolo

• Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation (literal)

Abstract

• Electron states at the SiO2/4H-SiC interface have been investigated using capacitor structures and especially, the influence of excess nitrogen, introduced by ion implantation, at the interface is studied in detail. Implanted and nonimplanted n-type samples with an interfacial concentration of nitrogen of similar to 10(19) cm(-3) and 10(16) cm(-3), respectively, were analyzed by capacitance-voltage (C-V) measurements, performed at different temperatures and probe frequencies, and thermal dielectric relaxation current (TDRC) measurements performed in the temperature range of 35-295 K. Three main categories of electron states are disclosed, true interface states (D-it), fast near interface states (NIToxfast) and slow near interface states (NIToxslow). The density versus energy distributions of D-it and NIToxfast have been deduced from the TDRC data and they are shown to give a close quantitative agreement with the shape and frequency dependence of the C-V curves. Further, the amount of NIToxslow extracted from TDRC is demonstrated to be responsible for the parallel shifts and hysterezis effects occurring in the C-V characteristics. All three categories of electron states are reduced in concentration in the implanted samples. This holds particularly for NIToxfast with a peak at similar to 0.1 eV below the conduction band edge of 4H-SiC that is suppressed by at least two orders of magnitude relative to the nonimplanted samples. The decrease for D-it is also substantial (a factor of similar to 10) while the loss for NIToxslow is considerably smaller (only similar to 30%). The results provide firm evidence that NIToxfast and NIToxslow do not originate from the same kind of defect center. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• SANDRO SOLMI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• SANDRO SOLMI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Keywords of "Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation" (Insieme di parole chiave)