Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC (Articolo in rivista)

Type
Label
  • Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1149/1.3491337 (literal)
Alternative label
  • Nipoti R; Mancarella F; Moscatelli F; Rizzoli R; Zampolli S; Ferri M (2010)
    Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC
    in Electrochemical and solid-state letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Nipoti R; Mancarella F; Moscatelli F; Rizzoli R; Zampolli S; Ferri M (literal)
Pagina inizio
  • H432 (literal)
Pagina fine
  • H435 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=ESLEF600001300001200H432000001&idtype=cvips&ident=freesearch&prog=search (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 13 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM of Bologna, via Gobetti 101, 40129 Bologna, Italy (literal)
Titolo
  • Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC (literal)
Abstract
  • A pyrolyzed photo-resist film is commonly used as a protective cap of the surface of ion implanted 4H-SiC wafers during the post implantation annealing process with the aim to prevent Si sublimation and step bunching formation. Such a film that is called Carbon-cap (C-cap) is always removed after post implantation annealing and before any other processing step of the SiC wafer. Here we show that this C-cap is a continuous, hard, black colour, mirror like and planar thin film that can be patterned by a RIE O2-based plasma for the fabrication of ohmic contact pads on both Al+ and P+ implanted 4H-SiC. This C-cap material has an electrical resistivity of 1.5 x 10E3 cm and a good resistance against scratch. Al (1% Si) wires can be ultrasonic bonded on the C-cap pads. Such a bonding and the C-cap adhesion to the implanted 4H-SiC surface are stable for electrical characterizations in vacuum between room temperature and 450°C. The measured specific contact resistance of the C-cap on a 1 x 10E20 cm 3 P+ implanted 4H-SiC is 9 x 10E5 cm2 at room temperature. Micro-Raman characterizations show that this C-cap is formed of a nano-crystalline graphitic phase. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it