Surface and interface issues in wide band gap semiconductor electronics (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Surface and interface issues in wide band gap semiconductor electronics (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Roccaforte F, Giannazzo F, Iucolano F, Eriksson J, Weng MH, Raineri V (2010)
  Surface and interface issues in wide band gap semiconductor electronics
  in Applied surface science
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Roccaforte F, Giannazzo F, Iucolano F, Eriksson J, Weng MH, Raineri V (literal)

Pagina inizio

• 5727 (literal)

Pagina fine

• 5735 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 256 (literal)

Rivista

• Applied surface science (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, I-95121 Catania, Italy (literal)

Titolo

• Surface and interface issues in wide band gap semiconductor electronics (literal)

Abstract

• Wide band gap (WGB) materials are the most promising semiconductors for future electronic devices, and are candidates to replace the conventional materials (Si, GaAs, ...) that are approaching their physical limits. Among WBG materials, silicon carbide (SiC) and gallium nitride (GaN) have achieved the largest advancements with respect to their material quality and device processing. Clearly, the devices performances depend on several surface and interface properties, which in turn are often crucially determined by the quality of the available material, as well as by the device processing maturity. In this paper, some surface and interface issues related to SiC and GaN devices processing are reviewed. First, the control of metal/SiC barrier uniformity and surface preparation will be discussed with respect to the performance of Schottky-based devices. Moreover, the impact of high-temperature annealing required for high-voltage Schottky diodes and MOSFETs fabrication, on the surface morphology and device performances will also be briefly presented. In the second part, it will be shown that for GaN the material quality is still the main concern, since dislocations have a severe influence on the current transport and barrier homogeneity of metal/GaN interfaces. Other practical implications of thermal annealing and surface passivation during GaN-based devices fabrication will also be addressed. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Autore CNR

• GUSTAV JENS PETER ERIKSSON (Unità di personale esterno)
• Ferdinando Iucolano (Unità di personale esterno)
• FABRIZIO ROCCAFORTE (Persona)
• MING HUNG WENG (Unità di personale esterno)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• Ferdinando Iucolano (Unità di personale esterno)
• MING HUNG WENG (Unità di personale esterno)
• GUSTAV JENS PETER ERIKSSON (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied surface science (Rivista)