http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36640

Electro-optically induced absorption in alpha-Si:H/alpha-SiCN waveguiding multistacks (Articolo in rivista)

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Electro-optically induced absorption in alpha-Si:H/alpha-SiCN waveguiding multistacks (Articolo in rivista) (literal)

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Alternative label

Rao S, Della Corte FG, Summonte C (2010)
Electro-optically induced absorption in alpha-Si:H/alpha-SiCN waveguiding multistacks
in Journal of the European Optical Society. Rapid publications; European Optical Society, Hannover (Germania)
(literal)

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1. Mediterranea Univ, Dept Informat Sci Math Elect & Transportat DIME, I-89060 Reggio Di Calabria, Italy 2. CNR, Unit Bologna, Inst Microelect & Microsyst, I-40129 Bologna, Italy (literal)

Titolo

Electro-optically induced absorption in alpha-Si:H/alpha-SiCN waveguiding multistacks (literal)

Abstract

Electro optical absorption in hydrogenated amorphous silicon (alpha-Si:H)-amorphous silicon carbonitride (alpha-SiCxNy) multilayers have been studied in three different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at lambda = 1.55 mu m through the application of an electric field which induces free carrier accumulation across the multiple insulator/semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations. (literal)

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