Measuring the temperature of a mesoscopic electron system by means of single electron statistics (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Measuring the temperature of a mesoscopic electron system by means of single electron statistics (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3365204 (literal)

Alternative label

• Prati E; Belli M; Fanciulli M; Ferrari G (2010)
  Measuring the temperature of a mesoscopic electron system by means of single electron statistics
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Prati E; Belli M; Fanciulli M; Ferrari G (literal)

Pagina inizio

• 113109 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 96 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR, Ist Microelettron & Microsistemi, Lab Nazl Mat & Disposit Microelettron, I-20041 Agrate Brianza, Italy 2. Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy 3. Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy (literal)

Titolo

• Measuring the temperature of a mesoscopic electron system by means of single electron statistics (literal)

Abstract

• We measure the temperature of a mesoscopic system consisting of an ultradilute two-dimensional electron gas at the Si/SiO2 interface in a metal-oxide-semiconductor field effect transistor (MOSFET) by means of the capture and emission of an electron in a point defect close to the interface. We show that the capture and emission by point defects in Si n-MOSFETs can be temperature dependent down to 800 mK. As the finite quantum grand canonical ensemble applies, the time domain charge fluctuation in the defect is used to define the temperature of the few electron gas in the channel. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P06.019.001 Nanostrutture di semiconduttori ed ossidi per applicazioni in nanoelettronica e spintronica (MD.P06.019.002) (Modulo)

Autore CNR

• MATTEO BELLI (Unità di personale esterno)
• ENRICO PRATI (Persona)
• MARCO FANCIULLI (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P06.019.001 Nanostrutture di semiconduttori ed ossidi per applicazioni in nanoelettronica e spintronica (MD.P06.019.002) (Modulo)

Autore CNR di

• MARCO FANCIULLI (Persona)
• MATTEO BELLI (Unità di personale esterno)
• ENRICO PRATI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)