Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3290975 (literal)

Alternative label

• Poggi A: Moscatelli F; Solmi S; Armigliato A; Belsito L; Nipoti R; (2010)
  Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Poggi A: Moscatelli F; Solmi S; Armigliato A; Belsito L; Nipoti R; (literal)

Pagina inizio

• 044506 (literal)

Pagina fine

• 044506 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 107 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR IMM, Sez Bologna, I-40129 Bologna, Italy (literal)

Titolo

• Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel (literal)

Abstract

• The electrical characteristics of n-metal oxide semiconductor field effect transistors (n-MOSFETs) fabricated on 4H-SiC with a process based on nitrogen (N) implantation in the channel region before the growth of the gate oxide are reported as a function of the N concentration at the SiO2/SiC interface. A strong correlation among the increase in the N concentration, the reduction of the interface state density near the conduction band and the improvement of the MOSFET performance was obtained. Hall-effect measurements were used to determine the electron mobility and the free carrier concentration in the MOSFET channel. Among the investigated combinations of N dose and oxidation time, the one with the higher dose and the shorter time produces MOSFETs with the higher N concentration at the SiO2/SiC interface and the best electrical characteristics. This superior performance is obtained in spite of the lowering of the bulk mobility in the channel of this sample, a negative effect probably ascribable to the incomplete recovery of the implantation damage or to the high density of interstitial nitrogen atoms present in the channel region. However, evidence of extended defects, clusters or nanoparticles was not observed by transmission electron microscopy analyses in any of the investigated SiC MOSFET devices. (literal)

Prodotto di

• Sviluppo di Modelli Fisici, Simulazioni e Tecniche di Caratterizzazione per le Nanoscienze (MD.P05.004.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ROBERTA NIPOTI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• ALDO ARMIGLIATO (Persona)
• SANDRO SOLMI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale interno)
• LUCA BELSITO (Unità di personale esterno)

Insieme di parole chiave

• Keywords of "Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di Modelli Fisici, Simulazioni e Tecniche di Caratterizzazione per le Nanoscienze (MD.P05.004.001) (Modulo)

Autore CNR di

• SANDRO SOLMI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• ALDO ARMIGLIATO (Persona)
• LUCA BELSITO (Unità di personale esterno)
• FRANCESCO MOSCATELLI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Keywords of "Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel" (Insieme di parole chiave)