Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 mu m (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 mu m (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Persano A; Nabet B; Currie M; Convertino A; Leo G; Cola A (2010)
  Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 mu m
  in I.E.E.E. transactions on electron devices
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Persano A; Nabet B; Currie M; Convertino A; Leo G; Cola A (literal)

Pagina inizio

• 1237 (literal)

Pagina fine

• 1242 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 57 (literal)

Rivista

• I.E.E.E. transactions on electron devices (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Univ Lecce, Inst Microelect & Microsyst, Natl Res Council IMM CNR, I-73100 Lecce, Italy 2. Drexel Univ, Dept Elect & Comp Engn, Philadelphia, PA 19104 USA 3. USN, Res Lab, Washington, DC 20375 USA 4. Natl Res Council IMM CNR, Inst Microelect & Microsyst, Unit Roma, I-00133 Rome, Italy 5. Natl Res Council ISMN CNR, Inst Nanostruct Mat, I-00016 Rome, Italy (literal)

Titolo

• Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 mu m (literal)

Abstract

• The potential of InAs quantum-dot (QD) photodetectors for room-temperature high-speed operation at wavelengths near 1.3 mu m is evaluated. Specifically, planar metal-semiconductor-metal structures on GaAs substrates containing one absorption layer of self-assembled InAs QDs embedded in Ga(In)As matrices are fabricated, characterized, and analyzed. Light absorption, optically generated carrier transport, and collection mechanisms are studied. The role of the QD embedding matrix in the lateral transport of the photogenerated carriers is also studied by comparing structures with QDs in GaAs and In0.15Ga0.85 As matrices. Devices show low dark currents in tens of nanoamperes and high light sensitivity when adjusted to QD volumes, whereas external quantum efficiency remains in the range 10(-5)-10(-4) for all fabricated samples. The time response of the fabricated devices is obtained using an excitation wavelength resonant with QD interband transitions, thus allowing the photogeneration of electron-hole pairs inside the dots. Results prove detection capability of a single layer of QDs in a common photodetector structure with a full-width half-maximum time response on the order of 10 ps. A long tail, about 100 ps, but at a small fraction of the peak response amplitude, is also observed, suggesting mechanisms for charge transport and collection. (literal)

Prodotto di

• Materiali nanostrutturati per celle fotovoltaiche e dispositivi su larga area (MD.P05.001.005) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• materiali e processi per la realizzazione di dispositivi per la conversione di energia (MD.P05.019.001) (Modulo)

Autore CNR

• ANNA PERSANO (Unità di personale interno)
• GABRIELLA LEO (Unità di personale interno)
• ADRIANO COLA (Unità di personale interno)
• ANNALISA CONVERTINO (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• materiali e processi per la realizzazione di dispositivi per la conversione di energia (MD.P05.019.001) (Modulo)
• Materiali nanostrutturati per celle fotovoltaiche e dispositivi su larga area (MD.P05.001.005) (Modulo)

Autore CNR di

• ADRIANO COLA (Unità di personale interno)
• GABRIELLA LEO (Unità di personale interno)
• ANNALISA CONVERTINO (Unità di personale interno)
• ANNA PERSANO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• I.E.E.E. transactions on electron devices (Rivista)