Phosphorus doping of ultra-small silicon nanocrystals (Articolo in rivista)

Type
Label
  • Phosphorus doping of ultra-small silicon nanocrystals (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0957-4484/21/2/025602 (literal)
Alternative label
  • Perego M, Bonafos C, Fanciulli M (2010)
    Phosphorus doping of ultra-small silicon nanocrystals
    in Nanotechnology (Bristol. Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Perego M, Bonafos C, Fanciulli M (literal)
Pagina inizio
  • 025602 (literal)
Pagina fine
  • 025602 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 21 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR INFM, Lab Nazl MDM, I-20041 Agrate Brianza, MI Italy 2. CEMES CNRS, nMAT Grp, F-31055 Toulouse, France 3. Univ Milano Bicocca, Dipartimento Sci Mat, I-20126 Milan, Italy (literal)
Titolo
  • Phosphorus doping of ultra-small silicon nanocrystals (literal)
Abstract
  • P-doped Si nanocrystals (radius <= 2 nm) were synthesized by depositing an ultrathin (0.3 nm) P-SiO2 film close to each SiO layer of SiO/SiO2 multilayers. During annealing P atoms migrate into the Si-rich region. Due to the low diffusivity of P in SiO2, P atoms segregate in the Si nanocrystal region and are incorporated in the silicon nanostructures. The P level in the Si nanoclusters can be controlled by changing the P content in the P-SiO2 layer. (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it