A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon (Articolo in rivista)

Type
Label
  • A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Mofrad MRT, La Magna A, Ishihara R, Ming H, Beenakker K (2010)
    A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon
    in Journal of Optoelectronics and Advanced Materials (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mofrad MRT, La Magna A, Ishihara R, Ming H, Beenakker K (literal)
Pagina inizio
  • 701 (literal)
Pagina fine
  • 706 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 12 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Delft Univ Technol, DIMES, Lab Elect Components Technol & Mat, NL-2600 GB Delft, Netherlands 2. CNR IMM Sez Catania, I-95121 Catania, Italy (literal)
Titolo
  • A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon (literal)
Abstract
  • The aim of this work is to understand the mechanism behind facet formation during epitaxial growth of silicon induced by excimer laser which leads to formation of subgrains in the final crystallized films. We use a phase-field methodology applied to a three-dimensional finite elements simulation of the melt and regrowth phase of silicon during the excimer laser annealing. Due to the specific patterning of the structure, a thermal gradient exists which leads to geometrically non-uniform solidification front. This observation may be the main reason for the generation of subgrains. (literal)
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