Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• Huby, N; Ferrari, S; Guziewicz, E; Godlewski, M; Osinniy, V (2008)
  Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Huby, N; Ferrari, S; Guziewicz, E; Godlewski, M; Osinniy, V (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 92 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• \"[Huby, N.] INFM, MDM, I-20041 Agrate Brianza, Italy; [Guziewicz, E.; Godlewski, M.; Osinniy, V.] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland (literal)

Titolo

• Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition (literal)

Abstract

• We report on the electrical properties of thin film transistors based on zinc oxide (ZnO) layers grown by low temperature (100-170 degrees C) atomic layer deposition. As evidenced through Hall effect measurements, a drastic decrease of the carrier concentration occurred for ZnO films grown at 100 degrees C. Time of flight-secondary ions mass spectroscopy analysis revealed that this decrease is associated with an increase of the hydroxide groups in the ZnO layer which suppressed oxygen vacancy formation. Transistors fabricated from ZnO films grown at 100 degrees C exhibit a high I-on/I-off ratio (similar to 10(7)) and an encouraging intrinsic channel mobility (similar to 1 cm(2)/V s). (c) 2008 American Institute of Physics. (literal)

Prodotto di

• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)

Autore CNR

• NOLWENN HUBY (Persona)

Insieme di parole chiave

• Keywords of "Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• NOLWENN HUBY (Persona)

Prodotto

• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Insieme di parole chiave di

• Keywords of "Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition" (Insieme di parole chiave)