Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers (Articolo in rivista)

Type
Label
  • Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Bonfanti, M; Grilli, E; Guzzi, M; Virgilio, M; Grosso, G; Chrastina, D; Isella, G; von Kanel, H; Neels, A (2008)
    Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bonfanti, M; Grilli, E; Guzzi, M; Virgilio, M; Grosso, G; Chrastina, D; Isella, G; von Kanel, H; Neels, A (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 78 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Bonfanti, M.] Univ Milano Bicocca, Dipartimento Sci Mat, CNISM, I-20125 Milan, Italy; Univ Milano Bicocca, Dipartimento Sci Mat, L NESS, I-20125 Milan, Italy; Univ Pisa, Dipartimento Fis E Fermi, I-56127 Pisa, Italy; NEST INFM, I-5612 Pisa, Italy; Politecn Milan, CNISM, Dipartimento Fis, I-22100 Como, Italy; Politecn Milan, L NESS, Dipartimento Fis, I-22100 Como, Italy; [Neels, A.] Univ Neuchatel, Inst Microtechnol, CH-2002 Neuchatel, Switzerland (literal)
Titolo
  • Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers (literal)
Abstract
  • Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp(3)d(5)s(*) tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators. (literal)
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