Boron diffusion in extrinsically doped crystalline silicon (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Boron diffusion in extrinsically doped crystalline silicon (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.81.045209 (literal)

Alternative label

• De Salvador D, Napolitani E, Bisognin G, Pesce M, Carnera A, Bruno E, Impellizzeri G, Mirabella S (2010)
  Boron diffusion in extrinsically doped crystalline silicon
  in Physical review. B, Condensed matter and materials physics; The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• De Salvador D, Napolitani E, Bisognin G, Pesce M, Carnera A, Bruno E, Impellizzeri G, Mirabella S (literal)

Pagina inizio

• 045209 (literal)

Pagina fine

• 045209 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 81 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Univ Padua, INFM, CNR, MATIS, I-35131 Padua, Italy 2. Univ Padua, Dipartimento Fis, I-35131 Padua, Italy 3. Catania Univ, INFM, CNR, MATIS, I-95123 Catania, Italy 4. Catania Univ, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

• Boron diffusion in extrinsically doped crystalline silicon (literal)

Abstract

• Boron diffusion is investigated in details by monitoring B-sharp concentration profiles embedded in isoconcentration doping backgrounds. Atomistic diffusion parameters (kick-out rate g, mean-free path of the mobile species lambda, and the diffusivity D) are experimentally evaluated as a function of temperature and doping level both of p or n type. This allows for a quantitative determination of the physical phenomena involved in the B diffusion process. We found that negatively charged substitutional B diffuses by interaction with neutral or doubly positively charged self-interstitials. The BI complex formed after interaction diffuses mainly in a neutral state and, to a less extent, through singly negatively charged state. The former contributes for about one tenth to the full diffusion in intrinsic condition at 700 degrees C whereas it plays a significant role in high n-codoping regime. Moreover, n codoping with As or P induces a Coulomb pairing between the different charge states of the dopants that reduces diffusion. Pairing effect is disentangled by the effect of BI- diffusion and pairing energies are determined for both As and P presence. The resulting quantitative model of diffusion is presented and compared with existing literature. (literal)

Editore

• The American Physical Society (Editore)

Prodotto di

• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ELENA BRUNO (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)
• SALVATORE MIRABELLA (Unità di personale interno)
• ENRICO NAPOLITANI (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)

Autore CNR di

• SALVATORE MIRABELLA (Unità di personale interno)
• ENRICO NAPOLITANI (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)
• ELENA BRUNO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)

Editore di

• The American Physical Society (Editore)