Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition (Articolo in rivista)

Type
Label
  • Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3305805 (literal)
Alternative label
  • Crupi I, Mirabella S, D'Angelo D, Gibilisco S, Grasso A, Di Marco S, Simone F, Terrasi A (2010)
    Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition
    in Journal of applied physics; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Crupi I, Mirabella S, D'Angelo D, Gibilisco S, Grasso A, Di Marco S, Simone F, Terrasi A (literal)
Pagina inizio
  • 043503 (literal)
Pagina fine
  • 043503 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 107 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ Catania, INFM, CNR, MATIS, I-95123 Catania, Italy 2. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy 3. STMicroelectronics, IMS R&D, I-95121 Catania, Italy (literal)
Titolo
  • Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition (literal)
Abstract
  • The double sign anomaly of the Hall coefficient has been studied in p-doped and n-doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition and annealed up to 500 degrees C. Dark conductivity as a function of temperature has been measured, pointing out a conduction mechanism mostly through the extended states. Anomalous Hall effect has been observed only in the as-deposited n-doped film, disappearing after annealing at 500 degrees C, while p-doped samples exhibit normal Hall effect. When Hall anomaly is present, a larger optical band gap and a greater Raman peak associated with Si-H bond are measured in comparison with the cases of normal Hall effect. The Hall anomaly will be related to the hydrogen content and implication on photovoltaic applications will be discussed. (literal)
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