Valley splitting and selection rules for inter-doublets optical transitions in strained [001]-Si/SiGe heterostructures (Articolo in rivista)

Type
Label
  • Valley splitting and selection rules for inter-doublets optical transitions in strained [001]-Si/SiGe heterostructures (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Virgilio, M; Grosso, G (2008)
    Valley splitting and selection rules for inter-doublets optical transitions in strained [001]-Si/SiGe heterostructures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Virgilio, M; Grosso, G (literal)
Pagina inizio
  • 2046 (literal)
Pagina fine
  • 2048 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 40 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Virgilio, Michele; Grosso, Giuseppe] Univ Pisa, Dipartimento Fis E Fermi, I-56127 Pisa, Italy; [Virgilio, Michele; Grosso, Giuseppe] CNR, NEST, INFM, I-00185 Rome, Italy (literal)
Titolo
  • Valley splitting and selection rules for inter-doublets optical transitions in strained [001]-Si/SiGe heterostructures (literal)
Abstract
  • By an sp(3)d(5)S* tight-binding model we investigate temperature and electric field effects on the optical intersubband transitions between valley split conduction states confined in strained Si/SiGe [001]-quantum wells. By the same model we analyze the symmetry of the confined states and deduce selection rules for the involved optical transitions. The selection rules here provided predict specific signatures in the intersubband absorption spectra which can be tuned by proper control of thermal population of the states and by changes in the intervally coupling induced by perpendicular electric fields. (c) 2007 Elsevier B.V. All rights reserved. (literal)
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Insieme di parole chiave di
data.CNR.it