Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Alternative label

• Bisognin G, Vangelista S, Mastromatteo M, Napolitani E, De Salvador D, Carnera A, Berti M, Bruno E, Scapellato G, Terrasi A (2010)
  Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution
  in Thin solid films (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Bisognin G, Vangelista S, Mastromatteo M, Napolitani E, De Salvador D, Carnera A, Berti M, Bruno E, Scapellato G, Terrasi A (literal)

Pagina inizio

• 2326 (literal)

Pagina fine

• 2329 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 518 (literal)

Rivista

• Thin solid films (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Univ Padua, INFM, CNR, MATIS, I-35131 Padua, Italy 2. Univ Padua, Dipartimento Fis, CNISM, Unita Padova, I-35131 Padua, Italy 3. Univ Catania, INFM, CNR, MATIS, I-95123 Catania, Italy 4. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

• Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution (literal)

Abstract

• High Resolution X-Ray Diffraction (HRXRD) was used to study the strain evolution of lattice defects formed in an array of B delta layers grown by Molecular Beam Epitaxy (MBE) and damaged by sub-amorphizing Ge self-implantation The MBE structure was implanted at room temperature (RT) with 840 keV Ge at a dose of 15 x 10(12) Ge/cm(2) First of all, we observed a RT strain reduction of similar to 40% with respect to the strain value found in the just-implanted sample This strain ageing phenomenon saturates in about 5 months Then, the complete defects dissolution was monitored by in-situ HRXRD during isochronal annealings. Three others strain-recovery steps were identified. the last at T=157 degrees C Moreover, Secondary Ion Mass Spectrometry performed after the strain recovery did not detect any B diffusion till T was raised up to 840 degrees C, measuring in this case a B diffusion equal to the equilibrium one. The whole set of data will be discussed and compared with existing literature (literal)

Prodotto di

• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• DAVIDE DE SALVADOR (Unità di personale esterno)
• ELENA BRUNO (Persona)
• ALBERTO CARNERA (Persona)
• ENRICO NAPOLITANI (Persona)
• ANTONIO TERRASI (Unità di personale esterno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P05.006.001 Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.002) (Modulo)

Autore CNR di

• ENRICO NAPOLITANI (Persona)
• DAVIDE DE SALVADOR (Unità di personale esterno)
• ANTONIO TERRASI (Unità di personale esterno)
• ELENA BRUNO (Persona)
• ALBERTO CARNERA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Thin solid films (Rivista)