Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis (Articolo in rivista)

Type
Label
  • Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1149/1.3298872 (literal)
Alternative label
  • Anzalone R, Camarda M, Locke C, Alquier D, Severino A, Italia M, Rodilosso D, Tringali C, La Magna A, Foti G, Saddow SE, La Via F, D'Arrigo G (2010)
    Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis
    in Journal of the Electrochemical Society
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Anzalone R, Camarda M, Locke C, Alquier D, Severino A, Italia M, Rodilosso D, Tringali C, La Magna A, Foti G, Saddow SE, La Via F, D'Arrigo G (literal)
Pagina inizio
  • H438 (literal)
Pagina fine
  • H442 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 157 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR, Inst Microelect & Microsyst, Sez Catania, I-95121 Catania, Italy 2. Univ Catania, Dept Phys, I-95125 Catania, Italy 3. Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA 4. Univ Tours, F-37071 Tours 2, France 5. ST Microelectron, I-95121 Catania, Italy (literal)
Titolo
  • Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis (literal)
Abstract
  • Chemical vapor deposition in the low pressure regime of a high quality 3C-SiC film on silicon (100)-oriented substrates was carried out using silane (SiH4), propane (C-3 H-8), and hydrogen (H-2) as the silicon supply, carbon supply, and gas carrier, respectively. The resulting bow in the freestanding cantilever structures was evaluated by an optical profilometer, and the residual gradient stress (sigma(1)) in the films was calculated to be approximately between 15 and 20 MPa, which is significantly lower than the previously reported 3C-SiC on Si films. Finite element simulations of the stress field in the cantilever have been carried out to separate the uniform contribution (sigma(0)), related to the SiC/Si interface, from the gradient one (sigma(1)), related to the defects present in the SiC epilayer. (literal)
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