DuMond analysis of bending in single crystals by Laue diffraction using sigma-pi polarization geometry (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• DuMond analysis of bending in single crystals by Laue diffraction using sigma-pi polarization geometry (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• Serrano J, Ferrero C, Servidori M, Hartwig J, Krisch M (2008)
  DuMond analysis of bending in single crystals by Laue diffraction using sigma-pi polarization geometry
  in Journal of applied crystallography
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Serrano J, Ferrero C, Servidori M, Hartwig J, Krisch M (literal)

Pagina inizio

• 1053 (literal)

Pagina fine

• 1056 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 41 (literal)

Rivista

• Journal of applied crystallography (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Univ Politecn Cataluna, EPSC, ICREA, Castelldefels 08860, Spain 2. Univ Politecn Cataluna, EPSC, Dept Fis Aplicada, Castelldefels 08860, Spain 3. European Synchrotron Radiat Facil, F-38043 Grenoble, France 4. CNR IMM, I-40129 Bologna, Italy (literal)

Titolo

• DuMond analysis of bending in single crystals by Laue diffraction using sigma-pi polarization geometry (literal)

Abstract

• A DuMond analysis of X-ray diffraction patterns has been carried out in the case of a combined sigma-pi polarization configuration, obtained using a setup with a double-crystal monochromator in reflection (Bragg) geometry and an analyser in transmission (Laue) geometry. The derived analytical expressions allow the characterization of the bending of the analyser and the quantitative estimation of the curvature radius and its sign from the width of the crystal rocking curves. The theoretical analysis is applied to the case of a thin, accidentally bent, Si crystal. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di Modelli Fisici, Simulazioni e Tecniche di Caratterizzazione per le Nanoscienze (MD.P05.004.001) (Modulo)

Autore CNR

• MARCO SERVIDORI (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di Modelli Fisici, Simulazioni e Tecniche di Caratterizzazione per le Nanoscienze (MD.P05.004.001) (Modulo)

Autore CNR di

• MARCO SERVIDORI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied crystallography (Rivista)