Hydrogen diffusion in GaAs1-xNx (Articolo in rivista)

Type
Label
  • Hydrogen diffusion in GaAs1-xNx (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.80.195206 (literal)
Alternative label
  • Trotta R, Giubertoni D, Polimeni A, Bersani M, Capizzi M, Martelli F, Rubini S, Bisognin G, Berti M (2009)
    Hydrogen diffusion in GaAs1-xNx
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Trotta R, Giubertoni D, Polimeni A, Bersani M, Capizzi M, Martelli F, Rubini S, Bisognin G, Berti M (literal)
Pagina inizio
  • 195206 (literal)
Pagina fine
  • 195206 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 80 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Sapienza Univ Roma, CNISM, I-00185 Rome, Italy 2. Sapienza Univ Roma, Dipartimento Fis, I-00185 Rome, Italy 3. CMM Fdn Bruno Kessler Irst, I-38100 Povo, Italy 4. CNR, INFM, TASC, I-34012 Trieste, Italy 5. Univ Padua, INFM, CNR, MATIS, I-35131 Padua, Italy 6. Univ Padua, Dept Phys, I-35131 Padua, Italy 7. Univ Padua, CNISM, Padova Unit, I-35131 Padua, Italy (literal)
Titolo
  • Hydrogen diffusion in GaAs1-xNx (literal)
Abstract
  • Hydrogen (or deuterium) incorporation in dilute nitride semiconductors modifies dramatically the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. In this work, we investigate how the formation and dissociation of such complexes rule the diffusion of deuterium in GaAs1-xNx. The concentration depth profile of deuterium is determined by secondary ion mass spectrometry under a wide range of experimental conditions that comprise different N concentrations (x=0.09%, 0.40%, 0.70%, and 1.5%) and D irradiation temperatures (T-D=200, 250, 300 and 350 degrees C). The experimental data are successfully reproduced by a diffusion model in the presence of strong D trapping. In particular, the deuterium diffusion and capture rate coefficients are determined, and a minimum decay length of the deuterium forefront is found at low T-D (< 250 degrees C) and high x (>0.7%). These parameters set the experimental conditions within which a nanostructuring of the physical properties of GaAs1-xNx is attainable. (literal)
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