Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.80.241406 (literal)

Alternative label

• Sonde S; Giannazzo F; Raineri V; Yakimova R; Huntzinger JR; Tiberj A; Camassel J (2009)
  Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Sonde S; Giannazzo F; Raineri V; Yakimova R; Huntzinger JR; Tiberj A; Camassel J (literal)

Pagina inizio

• 241406 (literal)

Pagina fine

• 241406 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 80 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR IMM, I-95121 Catania, Italy 2. Linkoping Univ, IFM, Linkoping, Sweden 3. CNRS, GES, F-34095 Montpellier, France 4. Univ Montpellier 2, F-34095 Montpellier 5, France (literal)

Titolo

• Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy (literal)

Abstract

• The current transport across the graphene/4H-SiC interface has been investigated with nanometric lateral resolution by scanning current spectroscopy on both epitaxial graphene (EG) grown on (0001) 4H-SiC and graphene exfoliated from highly oriented pyrolytic graphite deposited on the same substrate [deposited graphene (DG)]. This study reveals that the Schottky barrier height (SBH) of EG/4H-SiC (0.36 +/- 0.1 eV) is similar to 0.49 eV lower than the SBH of DG/4H-SiC (0.85 +/- 0.06 eV). This result is discussed in terms of the Fermi-level pinning similar to 0.49 eV above the Dirac point in EG due to the presence of positively charged states at the interface between the Si face of 4H-SiC and the carbon-rich buffer layer, which is the precursor for EG formation. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Autore CNR

• SUSHANT SUDAM SONDE (Unità di personale esterno)
• FILIPPO GIANNAZZO (Persona)
• VITO RAINERI (Persona)

Insieme di parole chiave

• Keywords of "Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• SUSHANT SUDAM SONDE (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)

Insieme di parole chiave di

• Keywords of "Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy" (Insieme di parole chiave)