Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions (Articolo in rivista)

Type
Label
  • Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3079505 (literal)
Alternative label
  • Severac F, Cristiano F, Bedel-Pereira E, Fazzini PF, Lerch W, Paul S, Hebras X, Giannazzo F (2009)
    Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions
    in Journal of applied physics; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Severac F, Cristiano F, Bedel-Pereira E, Fazzini PF, Lerch W, Paul S, Hebras X, Giannazzo F (literal)
Pagina inizio
  • 043711 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 105 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Toulouse, CNRS, LAAS, F-31077 Toulouse, France Mattson Thermal Prod GmbH, D-89160 Dornstadt, Germany Univ Toulouse, CNRS, CEMES, F-31055 Toulouse, France CNR-IMM Sez Catania, Catania, Italy (literal)
Titolo
  • Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions (literal)
Abstract
  • The Hall scattering factor r(H) has been determined for holes in high-dose boron-implanted ultrashallow junctions containing high concentrations of boron-interstitial clusters (BICs), combining scanning capacitance microscopy, nanospreading resistance, Hall effect, and secondary ion mass spectroscopy measurements. A value of r(H)=0.74 +/- 0.1 has been found in reference defect-free fully activated junctions, in good agreement with the existing literature. In the case of junctions containing high concentrations of immobile and electrically inactive BICs, and independently of the implant or the annealing process, the r(H) value has been found to be equal to 0.95 +/- 0.1. The increase in the r(H) value is explained in terms of the additional scattering centers associated to the presence of high concentrations of BICs. (literal)
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