Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3174438 (literal)

Alternative label

• Roccaforte F, Giannazzo F, Iucolano F, Bongiorno C, Raineri V (2009)
  Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Roccaforte F, Giannazzo F, Iucolano F, Bongiorno C, Raineri V (literal)

Pagina inizio

• 023703 (literal)

Pagina fine

• 023703 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 106 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM-Catania (literal)

Titolo

• Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation (literal)

Abstract

• In this paper, the influence of a high-temperature (900 degrees C) selective oxidation process on the electrical properties of AlGaN/GaN heterostructures was investigated. In particular, electrical measurements performed on appropriate devices and test patterns demonstrated that the current flow through the two-dimensional electron gas (2DEG) was suppressed, even if the thickness of the local oxide did not reach the AlGaN/GaN interface. The combination of macroscopic current-voltage and capacitance-voltage measurements with depth-resolved scanning capacitance microscopy elucidated the doping dependence and the compositional stability of the material during high-temperature oxidation. The reduction in the 2DEG sheet carrier density and the variation of the threshold voltage of simple high electron mobility transistor structures upon high-temperature annealing were also discussed. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Autore CNR

• CORRADO BONGIORNO (Unità di personale interno)
• FABRIZIO ROCCAFORTE (Persona)
• FILIPPO GIANNAZZO (Persona)
• Ferdinando Iucolano (Unità di personale esterno)
• VITO RAINERI (Persona)

Insieme di parole chiave

• Keywords of "Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• CORRADO BONGIORNO (Unità di personale interno)
• Ferdinando Iucolano (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Keywords of "Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation" (Insieme di parole chiave)