Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation (Articolo in rivista)

Type
Label
  • Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3174438 (literal)
Alternative label
  • Roccaforte F, Giannazzo F, Iucolano F, Bongiorno C, Raineri V (2009)
    Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Roccaforte F, Giannazzo F, Iucolano F, Bongiorno C, Raineri V (literal)
Pagina inizio
  • 023703 (literal)
Pagina fine
  • 023703 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 106 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM-Catania (literal)
Titolo
  • Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation (literal)
Abstract
  • In this paper, the influence of a high-temperature (900 degrees C) selective oxidation process on the electrical properties of AlGaN/GaN heterostructures was investigated. In particular, electrical measurements performed on appropriate devices and test patterns demonstrated that the current flow through the two-dimensional electron gas (2DEG) was suppressed, even if the thickness of the local oxide did not reach the AlGaN/GaN interface. The combination of macroscopic current-voltage and capacitance-voltage measurements with depth-resolved scanning capacitance microscopy elucidated the doping dependence and the compositional stability of the material during high-temperature oxidation. The reduction in the 2DEG sheet carrier density and the variation of the threshold voltage of simple high electron mobility transistor structures upon high-temperature annealing were also discussed. (literal)
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