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Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation (Articolo in rivista)
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- Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation (Articolo in rivista) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.3174438 (literal)
- Alternative label
Roccaforte F, Giannazzo F, Iucolano F, Bongiorno C, Raineri V (2009)
Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation
in Journal of applied physics
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- Roccaforte F, Giannazzo F, Iucolano F, Bongiorno C, Raineri V (literal)
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- Titolo
- Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation (literal)
- Abstract
- In this paper, the influence of a high-temperature (900 degrees C) selective oxidation process on the electrical properties of AlGaN/GaN heterostructures was investigated. In particular, electrical measurements performed on appropriate devices and test patterns demonstrated that the current flow through the two-dimensional electron gas (2DEG) was suppressed, even if the thickness of the local oxide did not reach the AlGaN/GaN interface. The combination of macroscopic current-voltage and capacitance-voltage measurements with depth-resolved scanning capacitance microscopy elucidated the doping dependence and the compositional stability of the material during high-temperature oxidation. The reduction in the 2DEG sheet carrier density and the variation of the threshold voltage of simple high electron mobility transistor structures upon high-temperature annealing were also discussed. (literal)
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