Reliability of charge trapping memories with high-k control dielectrics (Invited Paper) (Articolo in rivista)

Type
Label
  • Reliability of charge trapping memories with high-k control dielectrics (Invited Paper) (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.mee.2009.03.083 (literal)
Alternative label
  • Molas G.; Bocquet M.; Vianello E.; Perniola L.; Grampeix H.; Colonna JP.; Masarotto L.; Martin F.; Brianceau P.; Gely M.; Bongiorno C.; Lombardo S.; Pananakakis G.; Ghibaudo G.; De Salvo B. (2009)
    Reliability of charge trapping memories with high-k control dielectrics (Invited Paper)
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Molas G.; Bocquet M.; Vianello E.; Perniola L.; Grampeix H.; Colonna JP.; Masarotto L.; Martin F.; Brianceau P.; Gely M.; Bongiorno C.; Lombardo S.; Pananakakis G.; Ghibaudo G.; De Salvo B. (literal)
Pagina inizio
  • 1796 (literal)
Pagina fine
  • 1803 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0167931709002482 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 86 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CEA LETI MINATEC, Grenoble 9, France 2. IMEP MINATEC, Grenoble, France 3. CNR IMM, Catania, Italy 4. Univ Udine, DIEGM & IU Net, I-33100 Udine, Italy (literal)
Titolo
  • Reliability of charge trapping memories with high-k control dielectrics (Invited Paper) (literal)
Abstract
  • In this paper, we evaluate the potentiality of high-k materials (Al2O3, HfO2 and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-k based capacitors allowed to discuss the retention performances at room and high temperatures of high-k interpoly dielectrics. High-k materials are then integrated as control dielectrics in silicon nanocrystal and SONOS (Si/SiO2/Si3N4/SiO2/Si) memories. The role of the high-k layer on the memory performances is discussed; a particular attention being devoted to the retention characteristics. Analytical models, combined with experimental results obtained on various structures allowed to analyze the mechanisms involved during retention. (literal)
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