http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36533
Reliability of charge trapping memories with high-k control dielectrics (Invited Paper) (Articolo in rivista)
- Type
- Label
- Reliability of charge trapping memories with high-k control dielectrics (Invited Paper) (Articolo in rivista) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.mee.2009.03.083 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Molas G.; Bocquet M.; Vianello E.; Perniola L.; Grampeix H.; Colonna JP.; Masarotto L.; Martin F.; Brianceau P.; Gely M.; Bongiorno C.; Lombardo S.; Pananakakis G.; Ghibaudo G.; De Salvo B. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.sciencedirect.com/science/article/pii/S0167931709002482 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1. CEA LETI MINATEC, Grenoble 9, France
2. IMEP MINATEC, Grenoble, France
3. CNR IMM, Catania, Italy
4. Univ Udine, DIEGM & IU Net, I-33100 Udine, Italy (literal)
- Titolo
- Reliability of charge trapping memories with high-k control dielectrics (Invited Paper) (literal)
- Abstract
- In this paper, we evaluate the potentiality of high-k materials (Al2O3, HfO2 and HfAlO) for interpoly application in non-volatile memories. A study of the leakage currents of high-k based capacitors allowed to discuss the retention performances at room and high temperatures of high-k interpoly dielectrics. High-k materials are then integrated as control dielectrics in silicon nanocrystal and SONOS (Si/SiO2/Si3N4/SiO2/Si) memories. The role of the high-k layer on the memory performances is discussed; a particular attention being devoted to the retention characteristics. Analytical models, combined with experimental results obtained on various structures allowed to analyze the mechanisms involved during retention. (literal)
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