http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36525
Dielectric charging in microwave microelectromechanical Ohmic series and capacitive shunt switches (Articolo in rivista)
- Type
- Label
- Dielectric charging in microwave microelectromechanical Ohmic series and capacitive shunt switches (Articolo in rivista) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.3143026 (literal)
- Alternative label
Marcelli R, Papaioannu G, Catoni S, De Angelis G, Lucibello A, Proietti E, Margesin B, Giacomozzi F, Deborgies F (2009)
Dielectric charging in microwave microelectromechanical Ohmic series and capacitive shunt switches
in Journal of applied physics
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Marcelli R, Papaioannu G, Catoni S, De Angelis G, Lucibello A, Proietti E, Margesin B, Giacomozzi F, Deborgies F (literal)
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- Note
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- 1. CNR IMM Roma, I-00133 Rome, Italy
2. Univ Athens, Solid State Phys Sect, Athens 15784, Greece
3. FBK Irst, I-38050 Povo, TN Italy
4. ESA, Estec, NL-2200 AG Noordwijk, Netherlands (literal)
- Titolo
- Dielectric charging in microwave microelectromechanical Ohmic series and capacitive shunt switches (literal)
- Abstract
- The charging of the dielectric used for the actuation in microelectromechanical system (MEMS) devices is one of the major failure sources for switches based on this technology. For this reason, a better understanding of such an effect is vital to improve the reliability for both ground and space applications. In this paper, the expected response of MEMS switches to unipolar and bipolar dc actuation voltages has been measured and modeled. Two configurations of MEMS switches, namely, an Ohmic series and a shunt capacitive one designed for microwave applications, have been studied as a test vehicle for charging effects related to the dc actuation pads. The recorded data have been interpreted mainly through the Poole-Frenkel effect due to charge injection when a high voltage is applied to the dielectric layer. Metal-Insulator-Metal (MIM) structures have been also considered as a complementary information for the response of the dielectric material. (literal)
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