Low temperature reaction of point defects in ion irradiated 4H-SiC (Articolo in rivista)

Type
Label
  • Low temperature reaction of point defects in ion irradiated 4H-SiC (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Litrico G, Izzo G, Calcagno L, La Via F, Foti G (2009)
    Low temperature reaction of point defects in ion irradiated 4H-SiC
    in Diamond and related materials
    (literal)
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  • Litrico G, Izzo G, Calcagno L, La Via F, Foti G (literal)
Pagina inizio
  • 39 (literal)
Pagina fine
  • 42 (literal)
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  • 18 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Catania Univ, Dept Phys, I-95123 Catania, Italy 2. CNR IMM, Sez Catania, I-95121 Catania, Italy (literal)
Titolo
  • Low temperature reaction of point defects in ion irradiated 4H-SiC (literal)
Abstract
  • The low temperature evolution of point defects induced in SiC by ion irradiation was investigated by deep level transient spectroscopy. The defects were introduced by irradiation with a 7.0 MeV beam of C+ ions at a fluence of 6 x 10(9) cm(2). Annealing was then performed in the temperature range of 330-400 K in order to study the change in point defect structure with temperature. The low temperature annealing performed was observed to induce a change in the produced defects. The deep levels related to the S-x (E-c - 0.6 eV) and S-2 defects (E-c -0.7 eV) recovered with annealing while, simultaneously, a new level, S-x (E-c - 0.4 eV), was formed. The activation energy of the S-1 defect is 0.94 eV, while the annealing of both the S-x and S-2 levels occurred with activation energy of 0.65 eV. (literal)
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