Defect kinetics and dopant activation in submicrosecond laser thermal processes (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Defect kinetics and dopant activation in submicrosecond laser thermal processes (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3268472 (literal)

Alternative label

• K. Huet; G. Fisicaro; J. Venturini; H. Besaucèle; A. La Magna (2009)
  Defect kinetics and dopant activation in submicrosecond laser thermal processes
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• K. Huet; G. Fisicaro; J. Venturini; H. Besaucèle; A. La Magna (literal)

Pagina inizio

• 231901-1 (literal)

Pagina fine

• 231901-3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://apl.aip.org/resource/1/applab/v95/i23/p231901_s1?ver=pdfcov (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 95 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Excico, 13-21 Quai des Grésillons, 92230 Gennevilliers, France Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia, 64, I-95123 Catania, Italy CNR-IMM Sezione Catania, Stradale Primosole 50, I-95121 Catania, Italy (literal)

Titolo

• Defect kinetics and dopant activation in submicrosecond laser thermal processes (literal)

Abstract

• Defect evolution in ion implanted c-Si at the submicrosecond time scales during a laser thermal annealing process is investigated by means of kinetic simulations. Nonmelting, melting, and partial melting regimes are simulated. Our modeling considers irradiation, heat diffusion, and phase transition together with defect diffusion, annihilation, and clustering. The reduction in the implantation damage and its reorganization in defect aggregates are studied as a function of the process conditions. The approach is applied to double implanted Si and compared to experimental data, indicating a relationship between damage reduction and dopant activation. (literal)

Prodotto di

• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANTONINO LA MAGNA (Unità di personale interno)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)