Nanoscale current transport through Schottky contacts on wide bandgap semiconductors (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Nanoscale current transport through Schottky contacts on wide bandgap semiconductors (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1116/1.3043453 (literal)

Alternative label

• Giannazzo F; Roccaforte F; Iucolano F; Raineri V; Ruffino F; Grimaldi MG (2009)
  Nanoscale current transport through Schottky contacts on wide bandgap semiconductors
  in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giannazzo F; Roccaforte F; Iucolano F; Raineri V; Ruffino F; Grimaldi MG (literal)

Pagina inizio

• 789 (literal)

Pagina fine

• 794 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 27 (literal)

Rivista

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR IMM, I-95121 Catania, Italy 2. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

• Nanoscale current transport through Schottky contacts on wide bandgap semiconductors (literal)

Abstract

• The current transport through Schottky contacts on wide band gap semiconductors (GaN and SiC) was studied on nanoscale by conductive atomic force microscopy. Two very different metal-semiconductor systems were investigated: (i) a uniform (similar to 5 nm thick) Pt contact on GaN, and (ii) a discontinuous contact formed by self-assembled Au nanoclusters on SiC. The local current-voltage (I-V) measurements allowed to demonstrate the \"laterally inhomogeneous\" electrical behavior of the Pt/GaN contact, which was formed by a distribution of nanoscale patches with different barrier heights. This behavior wits explained in terms of the inhomogeneities of the Pt/GaN interface and/or of the electrically active detects present in the GaN epilayer. The standard deviation of the local barrier height histogram (sigma(phi)) was correlated with the dependence of the ideality factor (n) on temperature. deduced from conventional I-V measurements at variable temperatures on macroscopic Pt/GaN diodes. The local Schottky barrier height at the interface between the single metal nanoparticle and the semiconductor wits determined in the system of self-assembled Au nanoclusters on SiC. The histogram of the Schottky barrier heights was measured on samples with different cluster size distributions and the dependence of the barrier height on the cluster size was demonstrated. (literal)

Prodotto di

• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• FABRIZIO ROCCAFORTE (Persona)

Insieme di parole chiave

• Keywords of "Nanoscale current transport through Schottky contacts on wide bandgap semiconductors" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)

Insieme di parole chiave di

• Keywords of "Nanoscale current transport through Schottky contacts on wide bandgap semiconductors" (Insieme di parole chiave)