Electronic structure of epitaxial graphene nanoribbons on SiC(0001) (Articolo in rivista)

Type
Label
  • Electronic structure of epitaxial graphene nanoribbons on SiC(0001) (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3202397 (literal)
Alternative label
  • Deretzis I, La Magna A (2009)
    Electronic structure of epitaxial graphene nanoribbons on SiC(0001)
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Deretzis I, La Magna A (literal)
Pagina inizio
  • 063111-1 (literal)
Pagina fine
  • 063111-3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://apl.aip.org/resource/1/applab/v95/i6/p063111_s1?ver=pdfcov (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 95 (literal)
Rivista
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-Catania (literal)
Titolo
  • Electronic structure of epitaxial graphene nanoribbons on SiC(0001) (literal)
Abstract
  • We present electronic structure calculations of few-layer epitaxial graphene nanoribbons on SiC(0001). Trough an atomistic description of the graphene layers and the substrate within the extended Huckel theory and real/momentum space projections we argue that the role of the heterostructure's interface becomes crucial for the conducting capacity of the studied systems. The key issue arising from this interaction is a Fermi level pinning effect introduced by dangling interface bonds. Such phenomenon is independent from the width of the considered nanostructures, compromising the importance of confinement in these systems. (literal)
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