Ion irradiation and defect formation in single layer graphene (Articolo in rivista)

Type
Label
  • Ion irradiation and defect formation in single layer graphene (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.carbon.2009.07.033 (literal)
Alternative label
  • Compagnini G; Giannazzo F; Sonde S; Raineri V; Rimini E (2009)
    Ion irradiation and defect formation in single layer graphene
    in Carbon; Pergamon-Elsevier Science Ltd., Oxford (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Compagnini G; Giannazzo F; Sonde S; Raineri V; Rimini E (literal)
Pagina inizio
  • 3201 (literal)
Pagina fine
  • 3207 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 47 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ Catania, Dept Chem, I-95123 Catania, Italy 2. CNR, IMM, I-95121 Catania, Italy 3. Scuola Super Catania, I-95123 Catania, Italy 4. Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy (literal)
Titolo
  • Ion irradiation and defect formation in single layer graphene (literal)
Abstract
  • Ion irradiation by 500 keV C+ ions has been used to introduce defects into graphene sheets deposited on SiO2 in a controlled way. The combined use of Raman spectroscopy and atomic force microscopy (AFM) allowed one to clarify the mechanisms of disorder formation in single layers, bilayers and multi-layers of graphene. The ratio between the D and G peak intensities in the Raman spectra of single layers is higher than for bilayers and multi-layers, indicating a higher amount of disorder. This cannot be only ascribed to point defects, originating from direct C+-C collisions, but also the different interactions of single layers and few layers with the substrate plays a crucial role. As demonstrated by AFM, for irradiation at fluences higher than 5 x 10(13) cm(-2), the morphology of single layers becomes fully conformed to that of the SiO2 substrate, i.e. graphene ripples are completely suppressed, while ripples are still present on bilayer and multi-layers. The stronger interaction of a single layer with the substrate roughness leads to the observed larger amount of disorder. (literal)
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