http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36484
Ion irradiation and defect formation in single layer graphene (Articolo in rivista)
- Type
- Label
- Ion irradiation and defect formation in single layer graphene (Articolo in rivista) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.carbon.2009.07.033 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Compagnini G; Giannazzo F; Sonde S; Raineri V; Rimini E (literal)
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- Rivista
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1. Univ Catania, Dept Chem, I-95123 Catania, Italy
2. CNR, IMM, I-95121 Catania, Italy
3. Scuola Super Catania, I-95123 Catania, Italy
4. Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy (literal)
- Titolo
- Ion irradiation and defect formation in single layer graphene (literal)
- Abstract
- Ion irradiation by 500 keV C+ ions has been used to introduce defects into graphene sheets deposited on SiO2 in a controlled way. The combined use of Raman spectroscopy and atomic force microscopy (AFM) allowed one to clarify the mechanisms of disorder formation in single layers, bilayers and multi-layers of graphene. The ratio between the D and G peak intensities in the Raman spectra of single layers is higher than for bilayers and multi-layers, indicating a higher amount of disorder. This cannot be only ascribed to point defects, originating from direct C+-C collisions, but also the different interactions of single layers and few layers with the substrate plays a crucial role. As demonstrated by AFM, for irradiation at fluences higher than 5 x 10(13) cm(-2), the morphology of single layers becomes fully conformed to that of the SiO2 substrate, i.e. graphene ripples are completely suppressed, while ripples are still present on bilayer and multi-layers. The stronger interaction of a single layer with the substrate roughness leads to the observed larger amount of disorder. (literal)
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