Low temperature formation and evolution of a 10 nm amorphous Ni-Si layer on [001] silicon studied by in situ transmission electron microscopy (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Low temperature formation and evolution of a 10 nm amorphous Ni-Si layer on [001] silicon studied by in situ transmission electron microscopy (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3122140 (literal)

Alternative label

• Alberti A.; Bongiorno C.; Mocuta C.; Metzger T.; Spinella C.; Rimini E. (2009)
  Low temperature formation and evolution of a 10 nm amorphous Ni-Si layer on [001] silicon studied by in situ transmission electron microscopy
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Alberti A.; Bongiorno C.; Mocuta C.; Metzger T.; Spinella C.; Rimini E. (literal)

Pagina inizio

• 093506 (literal)

Pagina fine

• 093506 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://jap.aip.org/resource/1/japiau/v105/i9/p093506_s1?view=print (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 105 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 9 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR, IMM, I-95121 Catania, Italy 2. European Synchrotron Radiat Facil, F-38043 Grenoble, France (literal)

Titolo

• Low temperature formation and evolution of a 10 nm amorphous Ni-Si layer on [001] silicon studied by in situ transmission electron microscopy (literal)

Abstract

• We investigated low temperature formation of a 10 nm thick amorphous Ni-Si layer after room temperature deposition of a 7 nm Ni layer on [001] Si, by in situ transmission electron microscopy analyses. Instead of a conventional time sequence of phases or an immediate formation of NiSi2 domains, annealing at 220 oC promotes Ni diffusion through a thin interfacial amorphous layer, formed during deposition, into the Si lattice until the entire supply of pure Ni atoms is consumed. High concentration nickel diffusion induces a crystalline-to-amorphous transformation of the original silicon lattice. Further increasing the temperature, in the range between 300 and 350 oC, causes crystalline NiSi2 domains to nucleate and grow within the amorphous matrix. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Autore CNR

• CORRADO BONGIORNO (Unità di personale interno)
• ROSARIO CORRADO SPINELLA (Persona)
• ALESSANDRA ALBERTI (Persona)

Insieme di parole chiave

• Parole chiave di "Low temperature formation and evolution of a 10 nm amorphous Ni-Si layer on [001] silicon studied by in situ transmission electron microscopy" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Autore CNR di

• ALESSANDRA ALBERTI (Persona)
• ROSARIO CORRADO SPINELLA (Persona)
• CORRADO BONGIORNO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Parole chiave di "Low temperature formation and evolution of a 10 nm amorphous Ni-Si layer on [001] silicon studied by in situ transmission electron microscopy" (Insieme di parole chiave)