Diffusion and activation of ultra shallow boron implants in silicon in proximity of voids (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Diffusion and activation of ultra shallow boron implants in silicon in proximity of voids (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/SSP.131-133.357 (literal)

Alternative label

• Marcelot O., Claverie A., Alquier D., Cayrel F., Lerch W. , Paul S., Rubin L., Raineri V., Giannazzo F., Jaouen H. (2008)
  Diffusion and activation of ultra shallow boron implants in silicon in proximity of voids
  in Diffusion and defect data, solid state data. Part B, Solid state phenomena
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Marcelot O., Claverie A., Alquier D., Cayrel F., Lerch W. , Paul S., Rubin L., Raineri V., Giannazzo F., Jaouen H. (literal)

Pagina inizio

• 357 (literal)

Pagina fine

• 362 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 131-133 (literal)

Rivista

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• Vol. 131-133 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CEMES-CNRS, Toulouse, France LMP, Université de Tours, Tours France Mattson Thermal Products GmbH, Dornstadt Germany Axcelis Technologies, Beverly MA 01915 USA CNR-IMM, Catania Italy STMicroelectronics, Crolles France (literal)

Titolo

• Diffusion and activation of ultra shallow boron implants in silicon in proximity of voids (literal)

Abstract

• We have designed a set of experiments in which a controlled supersaturation of vacancies can be maintained constant during annealing of a boron implant. In presence of voids, a remarkable reduction of boron diffusivity is observed and, for low fluence B implantation, TED can be totally suppressed. We show that the presence of nanovoids in the B implanted region is not a prerequisite condition for the reduction of B diffusivity. Large voids located at more than 100 nm apart from the B profile still show the same effect. Small voids can also be used to increase the activation of boron. All these results are consistent with the hypothesis that, during annealing, vacancies are injected from the voids region towards the Is rich region in the implanted region where they massively recombine. Finally, we show that BICs cannot be simply dissolved by injecting vacancies into the region where they stand. (literal)

Prodotto di

• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FILIPPO GIANNAZZO (Persona)
• VITO RAINERI (Persona)

Insieme di parole chiave

• Parole chiave di "Diffusion and activation of ultra shallow boron implants in silicon in proximity of voids" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)

Insieme di parole chiave di

• Parole chiave di "Diffusion and activation of ultra shallow boron implants in silicon in proximity of voids" (Insieme di parole chiave)