A novel approach to characterization of progressive breakdown in high-k/metal gate stacks (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• A novel approach to characterization of progressive breakdown in high-k/metal gate stacks (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• Pagano R, Lombardo S, Palumbo F, Kirsch P, Krishnan SA, Young C, Choi R, Bersuker G, Stathis JH (2008)
  A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
  in Microelectronics and reliability
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Pagano R, Lombardo S, Palumbo F, Kirsch P, Krishnan SA, Young C, Choi R, Bersuker G, Stathis JH (literal)

Pagina inizio

• 1759 (literal)

Pagina fine

• 1764 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 48 (literal)

Rivista

• Microelectronics and reliability (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Titolo

• A novel approach to characterization of progressive breakdown in high-k/metal gate stacks (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• TRASPORTO IN MOS SCALATI E NUOVE STRUTTURE (MD.P05.008.001) (Modulo)

Autore CNR

• SALVATORE LOMBARDO (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• TRASPORTO IN MOS SCALATI E NUOVE STRUTTURE (MD.P05.008.001) (Modulo)

Autore CNR di

• SALVATORE LOMBARDO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronics and reliability (Rivista)