Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3006133 (literal)

Alternative label

• Iucolano F, Roccaforte F, Giannazzo F, Raineri V (2008)
  Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts
  in Journal of applied physics; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Iucolano F, Roccaforte F, Giannazzo F, Raineri V (literal)

Pagina inizio

• 093706 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 104 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 9 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR IMM, I-95121 Catania, Italy (literal)

Titolo

• Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts (literal)

Abstract

• In this work, the electrical properties of Ni/GaN Schottky contacts formed on high-temperature annealed (1100-1200 degrees C) GaN surfaces were studied. Although the morphology of the GaN surface was not changing after annealing, a worsening of the electrical behavior of the Schottky contact occurred, with a reduction in the barrier height and an increase in the leakage current. Moreover, a different temperature dependence of the reverse electrical characteristics of the Schottky diodes was observed. In particular, for the sample annealed at 1150 degrees C for 5 min, one-dimensional variable-range-hopping conduction was one of the dominant carrier transport mechanisms. The presence of a high density of interface states was indicated as a possible reason of this electrical behavior. (c) 2008 American Institute of Physics. (literal)

Editore

• AIP, American institute of physics (Editore)

Prodotto di

• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABRIZIO ROCCAFORTE (Persona)
• Ferdinando Iucolano (Unità di personale esterno)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)

Insieme di parole chiave

• Keywords of "Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• Ferdinando Iucolano (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Editore di

• AIP, American institute of physics (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Keywords of "Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts" (Insieme di parole chiave)