TiO2 thin films from titanium butoxide: synthesis, Pt addition, structural stability, microelectronic processing and gas-sensing properties (Articolo in rivista)

Type
Label
  • TiO2 thin films from titanium butoxide: synthesis, Pt addition, structural stability, microelectronic processing and gas-sensing properties (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.snb.2007.10.016 (literal)
Alternative label
  • Epifani M, Francioso L, Siciliano P, Helwig A, Mueller G, Díaz R, Arbiol J, Morante JR (2008)
    TiO2 thin films from titanium butoxide: synthesis, Pt addition, structural stability, microelectronic processing and gas-sensing properties
    in Sensors and actuators. B, Chemical (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Epifani M, Francioso L, Siciliano P, Helwig A, Mueller G, Díaz R, Arbiol J, Morante JR (literal)
Pagina inizio
  • 599 (literal)
Pagina fine
  • 608 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 130 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, Sezione di Lecce; EADS, Monaco; EME/CeRMAE/IN2 Università di Barcellona; TEM-MAT, Università di Barcellona; (literal)
Titolo
  • TiO2 thin films from titanium butoxide: synthesis, Pt addition, structural stability, microelectronic processing and gas-sensing properties (literal)
Abstract
  • TiO2 thin films were prepared by spin-coating of a Ti butoxide-derived sol onto oxidized silicon wafers, followed by a heat-treatment at temperatures ranging from 500 to 800 oC. The film thickness after heat-treatment at 500 oC was 50 nm. Pt addition, with a Pt:Ti nominal atomic ratio ranging from 0.01 to 0.1, was achieved by adding solutions of Pt(II) acetylacetonate to the TiO2 sols. The thin films were investigated by X-ray diffraction, evidencing that Pt promoted the structural transformation of the starting anatase phase of TiO2 to rutile, with a more enhanced effect with increasing the Pt concentration and/or the heat-treatment temperature. High-resolution transmission electron microscopy evidenced that, when a Pt:Ti atomic ratio of 0.05 and a heat treatment at 500 oC were used, the TiO2 contained both anatase and rutile phases and interspersed Pt nanocrystals (2-3 nm). This result allowed attributing the structural transformation in TiO2 to the strain created by the Pt nanocrystals--a conclusion which was further corroborated by the observation that Pd-modified films, prepared under similar conditions, were only composed of anatase TiO2 and did not contain any Pd nanocrystals. The films heat-treated at 500 oC were able to withstand a full microelectronic processing sequence, including dry etching for gas sensors sensitive area definition, Ti/Pt contact formation, and heater processing on the backside of the sensor substrates. H2 gas-sensing tests evidenced that the anatase TiO2 phase was much more sensitive than the rutile one. The presence of Pt further enhanced the gas-sensing properties, lowering the optimum sensor operation temperature to about 330 oC and allowing for the detection of a minimum H2 concentration of about 1000 ppm. (literal)
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