Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy (Articolo in rivista)

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  • Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2951896 (literal)
Alternative label
  • Parisini A; Morandi V; Solmi S; Merli PG; Giubertoni D; Bersani M; van den Berg JA (2008)
    Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy
    in Applied physics letters; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Parisini A; Morandi V; Solmi S; Merli PG; Giubertoni D; Bersani M; van den Berg JA (literal)
Pagina inizio
  • 261907 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.bo.imm.cnr.it (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 92 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM Sezione di Bologna, via P. Gobetti 101, 40129 Bologna, Italy Fondazione Bruno Kessler-irst, via Sommarive 18, 38050 Povo-Trento, Italy Institute of Materials Research, University of Salford, Salford, M5 4WT, United Kingdom (literal)
Titolo
  • Quantitative determination of the dopant distribution in Si ultrashallow junctions by tilted sample annular dark field scanning transmission electron microscopy (literal)
Abstract
  • In this letter, it is shown how the application of a Z-contrast scanning transmission electron microscopy technique to the study of the dopant signal in ultrashallow junctions in Si can lead, in the case of As in Si, to a quantitative determination of the dopant depth profile at subnanometer resolution. The quantitative results thus obtained demonstrate that As accumulates on the Si side of the SiO2/Si interface with a negligible loss of dopant into the oxide. Modeling of the effect indicates that segregation occurring during the recrystallization of the implanted layer is the dominant cause of this dopant pileup. (literal)
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